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D
P-Pack
G S
APL501P
500V 43.0A 0.12W HERMETIC PACKAGE
POWER MOS IV (R)
MAXIMUM RATINGS
Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
1
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: TC = 25C unless otherwise specified.
APL501P UNIT Volts Amps
500 43 172 30 520 4.16 -55 to 150
and Inductive Current Clamped
Volts Watts W/C C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 43 0.12 25
(VDS > I D(ON) x R DS(ON) Max, VGS = 8V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID [Cont.])
Ohms A
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
250 100 2 4
nA Volts
THERMAL CHARACTERISTICS
Symbol RQJC RQCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) MIN TYP MAX UNIT C/W
0.24 0.06
8-2001 050-5898 Rev -
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA EUROPE
405 S.W. Columbia Street Chemin de Magret
Bend, Oregon 97702 -1035 F-33700 Merignac - France
Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6W MIN TYP MAX
APL501P
UNIT
6040 1220 510 13 20 54 11
7300 1710 770 26 40 81 20
ns pF
SAFE OPERATING AREA CHARACTERISTICS
Symbol SOA1 Characteristic Safe Operating Area Test Conditions / Part Number VDS = 400 V, IDS = 0.813A, t = 20 sec., TC = 60C MIN TYP MAX UNIT Watts
325
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.3 , THERMAL IMPEDANCE (C/W) D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 0.02 0.01 SINGLE PULSE 0.001 10-5 10-4 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
Z
qJC
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
80 VGS=9V, 10V, 12V, 14 & 16V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 8V 60 7V 40 6V 20 5V 0
80
VGS=10, 12, 14 & 16V
9V 8V
60 7V 40 6V 20 5V 0
Rev -
8-2001
050-5898
0 20 40 60 80 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0 4 8 12 16 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
APL501P
TJ = -55C ID, DRAIN CURRENT (AMPERES) TJ = +25C 30 TJ = +125C RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 40 1.30
V
GS
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
1.20 VGS=10V 1.10
20
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.00
10
TJ = +125C TJ = +25C TJ = -55C
0.90
VGS=20V
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 50 ID, DRAIN CURRENT (AMPERES)
0
0.80
0
20 40 60 80 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 25
I
D
1.15 1.10 1.05 1.00
40
30
20
0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
10
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5
= 0.5 I V
GS D
0
[Cont.]
= 10V
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 100S 1mS C, CAPACITANCE (pF)
2.0
1.1 1.0 0.9
1.5
1.0
0.8 0.7 0.6 -50
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
OPERATION HERE LIMITED BY RDS (ON)
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
175 100 ID, DRAIN CURRENT (AMPERES) 50
30,000
10,000 5,000 Ciss
10 5 10mS 100mS 1 .5 DC TC =+25C TJ =+150C SINGLE PULSE
1,000 500
Coss Crss 8-2001 050-5898 Rev -
.1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
APL501P
P-Pack Package Outline
41.53 (1.635) 41.02 (1.615) 35.18 (1.385) 34.67 (1.365) 28.70 (1.130) 28.45 (1.120) 3.43 (.135) 2.92 (.115) (4-Places) 9.27 (.365) 8.64 (.340) 1.40 (.055) 1.02 (.040)
3.43 (.135) 2.92 (.115) (4-Places)
Source
Drain
4.06 (.160) 3.81 (.150) (5 Places) 51.05 (2.01) 50.55 (1.99) 35.81 (1.41) 35.31 (1.39) 29.34 (1.155) 29.08 (1.145)
10.92 (.430) 10.67 (.420)
Gate
Source Sense
8-2001
5.33 (.210) 4.83 (.190)
Rev -
11.63 (.458) 11.13 (.438)
4.39 (.173) 4.14 (.163) (4 Places) 12.45 (.490) 11.94 (.470)
.635 (.025) .381 (.015)
Dimensions in Millimeters and (Inches)
050-5898
APT's devices are covered by one or more of the following U.S.patents:
4,895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058

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